ASML
Provisional entry — research in progress
This page was generated automatically from cited public sources and hasn't completed the full research pass yet. Every specification shown carries its source; more detail is added as research completes.

Lithography steppers like the PAS 5500 60 i-Line are used in the front-end of line (FEOL) and back-end of line (BEOL) of semiconductor fabrication. The stepper is typically preceded by wafer cleaning and photoresist coating steps. After exposure, the wafer proceeds to a post-exposure bake and then to developing, etching, and other pattern-transfer processes. The stepper's alignment capability allows it to be used for critical layers that require overlay with previous patterns.
The PAS 5500 60 i-Line stepper has been employed in research to pattern mesa regions for ultrathin crystalline silicon solar cells.[2]
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The following facts about the PAS 5500 60 i-Line are absent from this record as of this revision. First-hand knowledge or a citation closes a gap; every submission is reviewed before publication.
No publicly documented production dates or lifecycle milestones (introduction, end of production, EOL) for the PAS 5500 60 i-Line are on record.
Answerable by: OEM historical records or a trade-press announcement
No publicly documented variants, configuration options, or revision breakpoints of the PAS 5500 60 i-Line are on record.
Answerable by: an OEM product catalog or an engineer who ordered or specified the tool
The control-system platform and OS era of the PAS 5500 60 i-Line are not on record.
Answerable by: an engineer who operated it or OEM installation records
No publicly documented failure modes or field errata for the PAS 5500 60 i-Line are on record.
Answerable by: a field service engineer, process engineer, or maintenance technician
The process node or technology generation of the PAS 5500 60 i-Line is not on record.
Answerable by: an OEM datasheet or a fab qualification report
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Last updated Sep 25, 2026.
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The EVG 101 is an advanced resist processing system for spin or spray coating and developing of wafers up to 300 mm.