Waferpedia

Denton Vacuum

635

Deposition8"Denton Vacuum 635 family
Research Quality: 60% complete
635 — nanofab.utah.edu
Fig. 01635nanofab.utah.edu[1]

Wafer size

8"

Power

DC1 pulse or DC, DC2, RF1[1]

Vacuum

Denton Vacuum[1]

Gas delivery

100 sccm MFC controller[1]

Optics

From a few nm to hundreds of nm[1]

What it is

The Denton Vacuum 635 is an automated sputter deposition system.[3]

The Denton 635 is installed in the University of Utah Nanofab deposition area.[2]

How it works

The Denton 635 uses four confocal cathodes arranged with the cathodes inclined off vertical.[1][3]

The Denton 635 supports sputter power supplies, substrate sputter pre-clean, co-sputtering, and reactive sputtering with nitrogen or oxygen.[1][3]

The Denton 635 uses a water-cooled stage in the standard configuration and can also use a heated stage.[1][3]

Applications

The Denton 635 deposits metals and other thin films for microfabrication.[1]

The Denton 635 has standard targets for gold, chromium, platinum, and titanium, and it can also use other targets with staff approval.[1]

The Denton 635 is used with materials including PET, PMMA, and PDMS.[1][3]

  • Magnetron sputtering
  • Deposition

What do the numbers mean?

Power & electrical2

Sputter power supplies
DC1 pulse or DC, DC2, RF1[1]
Accurate?
Sputter Power Supplies
DC1 (DC or pulsed DC), DC2, RF1 (auto-tuning), RF2 (for pre-clean). Switch-control any supply to any cathode, including simultaneous co-sputtering.[3]
Accurate?

Vacuum & pumping6

OEM
Denton Vacuum[1]
Accurate?
Chamber base pressure
2 x 10^-7 Torr in 12 hours[1]
Accurate?
Argon pressure range
< 1-90 mT[1]
Accurate?
Base Pressure
Base pressure typical < 5×10⁻⁸ Torr; chamber base pressure in 12 hours = 2×10⁻⁷ Torr[3]
Accurate?
Chamber Pressure Range
< 1-90 mT controllable with APC and 100 sccm Ar MFC controller[3]
Accurate?
Cryo Pump
Cryo pumped deposition chamber; cryo temperature < 20 K[3]
Accurate?

Wafer handling7

Substrate pre-clean
RF2 supply[1]
Accurate?
Substrate rotation
+/- 5% uniformity[1]
Accurate?
Substrate heating
Up to 500 C[1]
Accurate?
Deposition Uniformity
+/- 5% over 200 mm wafer/pallet area[3]
Accurate?
Substrate Rotation
50% = 13 RPM[3]
Accurate?
Substrate Heat
Up to 500 °C (heated stage installed)[1]
Accurate?
Load Lock
Ventable load lock with auto transfer[3]
Accurate?

Gas & chemistry1

APC / MFC controller
100 sccm MFC controller[1]
Accurate?

Optics & imaging3

Film thickness range
From a few nm to hundreds of nm[1]
Accurate?
Pre-clean Rate (RF2)
~11 nm/min at 100 W Ar, ~33 nm/min at 300 W[3]
Accurate?
Film Thickness Control
Controllable from a few nm to hundreds of nm[1]
Accurate?

Control & software1

Cathode switching
Switch-control any supply to any cathode[1]
Accurate?

Configuration & options13

Model
635[1]
Accurate?
Tool type
Deposition[2]
Accurate?
Process capabilities
Four confocal cathodes, inclined 25 degrees off vertical[1]
Accurate?
Standard targets
4" Au, 4" Cr, 3" Pt, 3" Ti[1]
Accurate?
Co-sputter capability
Yes[1]
Accurate?
Reactive sputtering
Nitrogen or oxygen[1]
Accurate?
Stage diameter
8 inch[1]
Accurate?
Liftoff deposition
With water-cooled stage[1]
Accurate?
Process Type
Sputter deposition (magnetron sputtering)[1]
Accurate?
Cathodes
Four confocal cathodes, inclined 25 degrees off vertical[3]
Accurate?
Stage Diameter
8 inch (200 mm)[1]
Accurate?
Reactive Sputtering
Plasma Emission Monitor (PEM) controllable for N₂ or O₂, using pulsed DC supply[3]
Accurate?
Cooling Stage
Water-cooled stage (standard configuration) supports liftoff deposition at 100-200W[3]
Accurate?
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What replaced it?

What does it need to run?

Site utility requirements, footprint, and infrastructure needed to install and operate this tool. Sourced from public records.

  • OEMDenton Vacuum[1]
  • Sputter power suppliesDC1 pulse or DC, DC2, RF1[1]
  • Chamber base pressure2 x 10^-7 Torr in 12 hours[1]
  • Argon pressure range< 1-90 mT[1]
  • APC / MFC controller100 sccm MFC controller[1]
  • Base PressureBase pressure typical < 5×10⁻⁸ Torr; chamber base pressure in 12 hours = 2×10⁻⁷ Torr[3]
  • Chamber Pressure Range< 1-90 mT controllable with APC and 100 sccm Ar MFC controller[3]
  • Sputter Power SuppliesDC1 (DC or pulsed DC), DC2, RF1 (auto-tuning), RF2 (for pre-clean). Switch-control any supply to any cathode, including simultaneous co-sputtering.[3]
  • Cryo PumpCryo pumped deposition chamber; cryo temperature < 20 K[3]

Where are the manuals?

Generated from public-source data on file. Enter your email to access — nothing is published; details are routed privately.

Not publicly documented

Field notes

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Frequently asked questions

How is the film thickness controlled?General reference — not yet source-verified

Film thickness is typically controlled using a quartz crystal microbalance that monitors the mass deposited, or via optical monitoring for anti-reflective coatings. The control system maintains the deposition rate and thickness with high repeatability.

What substrates can be coated?General reference — not yet source-verified

The system can accommodate substrates that fit its chamber, including glass, metal, and plastic components. Fixtures and rotating domes allow multiple pieces to be coated in one batch.

Not publicly documented

The following facts about the 635 are absent from this record as of this revision. First-hand knowledge or a citation closes a gap; every submission is reviewed before publication.

  • No publicly documented production dates or lifecycle milestones (introduction, end of production, EOL) for the 635 are on record.

    Answerable by: OEM historical records or a trade-press announcement

  • No publicly documented variants, configuration options, or revision breakpoints of the 635 are on record.

    Answerable by: an OEM product catalog or an engineer who ordered or specified the tool

  • The control-system platform and OS era of the 635 are not on record.

    Answerable by: an engineer who operated it or OEM installation records

  • No publicly documented failure modes or field errata for the 635 are on record.

    Answerable by: a field service engineer, process engineer, or maintenance technician

  • The process node or technology generation of the 635 is not on record.

    Answerable by: an OEM datasheet or a fab qualification report

No research found yet — worked with this tool? Share what you know.

Sources & citations

Sources (3)Every fact above is drawn from these public sources
  1. [1]nanofab.utah.edu — nanofab.utah.edunanofab.utah.edu
  2. [2]nanofab.utah.edu — nanofab.utah.edunanofab.utah.edu
  3. [3]nanofab.utah.edu — nanofab.utah.edunanofab.utah.edu
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Last updated Oct 3, 2026.

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