Lam Research
The Lam 9600 is an 8-inch etch system. The Lam 9600 uses Envision Software and includes a Hine Cassette Indexer for load/unload. The Lam 9600 main chamber is configured with a bottom actuated clamping system, an Adixen Alcatel ATH 1300 turbo pump, and RPG 1250 RF generators.[1][2]

Plate 01#Brooks robot Lam research 9400 9600 etcher VTM robot overhaul exchange repair
Power
208 V[1]
Vacuum
Adixen Alacatel ATH 1300 Turbo Pump[1]
Gas delivery
Gas Box Configured for 6 Gasses[1]
The Lam 9600 is a single-wafer plasma etch system used in semiconductor manufacturing for removing material from wafer surfaces through reactive ion etching.
The Lam 9600 uses a bottom-actuated clamping system to hold the wafer in the main etch chamber. The main chamber is equipped with an Adixen Alcatel ATH 1300 turbo pump and a VAT 65 throttle valve to maintain process vacuum. A gas box configured for six gases supplies process chemistry to the chamber.[1]
Reactive ion etching is driven by RPG 1250 RF generators that create a plasma from the process gases. The DSQ (downstream) / exit load lock is configured for three gases and includes a heated paddle. An atmospheric passivation module (APM) and a WVDS (wafer vapor deposition system) are present for passivation steps.[1][2]
Site utility requirements, footprint, and infrastructure needed to install and operate this tool. Sourced from public records.
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Plasma etch systems are capable of removing a broad range of materials, including silicon, silicon dioxide, silicon nitride, aluminum, copper, and various low-k dielectrics. The specific chemistry and process conditions are tailored to the material being etched.
Uniformity is managed through hardware design (e.g., gas distribution systems, electrode temperature control) and process parameters (e.g., pressure, gas flow ratios). Many etch systems incorporate multi-zone heating or cooling to maintain consistent etch rates from center to edge.
Yes, many plasma etch platforms are designed to handle both conductor and dielectric materials by switching between appropriate gas chemistries and hardware configurations. However, certain systems are optimized for one class of materials and may require modification for the other.
Routine maintenance includes periodic cleaning of the chamber walls and electrode surfaces, replacement of consumable parts such as O-rings and dielectric windows, and recalibration of gas delivery and RF matching networks. Intervals depend on usage and process chemistry but are typically measured in processing hours or wafer counts.
The following facts about the 9600 are absent from this record as of this revision. First-hand knowledge or a citation closes a gap; every submission is reviewed before publication.
No publicly documented production dates or lifecycle milestones (introduction, end of production, EOL) for the 9600 are on record.
Answerable by: OEM historical records or a trade-press announcement
No publicly documented variants, configuration options, or revision breakpoints of the 9600 are on record.
Answerable by: an OEM product catalog or an engineer who ordered or specified the tool
The control-system platform and OS era of the 9600 are not on record.
Answerable by: an engineer who operated it or OEM installation records
No publicly documented failure modes or field errata for the 9600 are on record.
Answerable by: a field service engineer, process engineer, or maintenance technician
The process node or technology generation of the 9600 is not on record.
Answerable by: an OEM datasheet or a fab qualification report
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Last updated Oct 11, 2026.
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