STS
ICP
Provisional entry — research in progress
This page was generated automatically from cited public sources and hasn't completed the full research pass yet. Every specification shown carries its source; more detail is added as research completes.
The STS ICP Etcher is an inductively coupled plasma (ICP) etch system. The STS ICP Etcher operates at 400 V and 50 Hz.[1]
What it is
General reference — not yet source-verifiedThe STS ICP Etcher is an inductively coupled plasma dry etch system used in semiconductor processing.
The STS ICP Etcher is an etching tool rather than a deposition or inspection tool.
How it works
General reference — not yet source-verifiedAn inductively coupled plasma etcher generates a plasma with an external radio-frequency source and uses that plasma to create reactive species that remove material from a patterned surface.
An ICP etch chamber typically separates plasma generation from wafer bias control, which allows the operator to tune ion density and ion energy with greater independence than in simpler plasma tools.
Where it fits in the process flow
General reference — not yet source-verifiedThe STS ICP Etcher sits in the dry-etch segment of the wafer fabrication flow, after pattern transfer by lithography and before later device completion steps.
The STS ICP Etcher is used when patterned features must be transferred into a substrate or film with directional etching and controlled profile formation.
Applications
General reference — not yet source-verifiedAn ICP etcher is used for silicon etching, dielectric etching, and other anisotropic pattern-transfer work in semiconductor and microfabrication flows.
An ICP etcher is also used for processes that require selective removal of patterned films and control of sidewall shape.
What do the numbers mean?
Power & electrical3
Wafer handling1
Gas & chemistry2
Configuration & options3
Vintage & configurations
Documented models & variants
| Designation | Generation | Vintage | Changes | Source |
|---|---|---|---|---|
| STS ASE ICP DRIE – Fluorine | ICP | — | Load-locked inductively coupled plasma etch system for deep silicon etching using the Bosch process; uses SF6, C4F8, O2, and Ar. | cores.research.asu.edu[3] |
| STS Multiplex ICP | ICP | — | ICP plasma etcher for 100 mm wafers using chlorine and bromine chemistry; used for metals etching, deep polymer etching, and Si, SiO2, and Si3N4 thin films etching. | epfl.ch[2] |
What does it need to run?
Site utility requirements, footprint, and infrastructure needed to install and operate this tool. Sourced from public records.
Where are the manuals?
Publicly hosted documents referencing this tool, linked at their original location. Hosted by the linked institutions — availability may change.
- SLR user manualManualutah.edu
- CNS Consolidated RatesDocumentharvard.edu
Generated from public-source data on file. Enter your email to access — nothing is published; details are routed privately.
Not publicly documented
Field notes
No research found yet — worked with this tool? Share what you know.
Frequently asked questions
Not publicly documented
The following facts about the ICP are absent from this record as of this revision. First-hand knowledge or a citation closes a gap; every submission is reviewed before publication.
No publicly documented production dates or lifecycle milestones (introduction, end of production, EOL) for the ICP are on record.
Answerable by: OEM historical records or a trade-press announcement
The control-system platform and OS era of the ICP are not on record.
Answerable by: an engineer who operated it or OEM installation records
No publicly documented failure modes or field errata for the ICP are on record.
Answerable by: a field service engineer, process engineer, or maintenance technician
The process node or technology generation of the ICP is not on record.
Answerable by: an OEM datasheet or a fab qualification report
No publicly documented compatible parts, consumables, or accessories for the ICP are on record.
Answerable by: an OEM parts catalog or a service engineer
No research found yet — worked with this tool? Share what you know.
Sources & citations
Sources (8)Every fact above is drawn from these public sources
- [1]Inventory photo
- [2]epfl.ch — epfl.chepfl.ch
- [3]cores.research.asu.edu — cores.research.asu.educores.research.asu.edu
- [4]ICP - Wikipedia — en.wikipedia.orgen.wikipedia.org
- [5]STS Aspect ICP RIE - Claire & John Bertucci Nanotechnology Laboratory - College of Engineering - Carnegie Mellon Univers — nanofab.ece.cmu.edunanofab.ece.cmu.edu
- [6]Tool Details - Harvard CNS — cns1.rc.fas.harvard.educns1.rc.fas.harvard.edu
- [7]Equipment List — nanofab.utah.edunanofab.utah.edu
- [8]Etching | UCLA Nanolab — nanolab.ucla.edunanolab.ucla.edu
Last updated Oct 6, 2026.
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