Tegal
The Tegal 903ACS is a diode reactive ion etching system. The Tegal 903ACS is a narrow gap diode reactor system. The Tegal 903ACS can etch features down to 1 micron.[1]
Wafer size
75 mm, 100 mm, 125 mm, and 150 mm diameter wafers; 4-inch square wafers
Node / era
1 micron
The Tegal 903ACS handles wafer movement cassette to cassette, which avoids manual wafer handling in the etch stage.[1]
The Tegal 903ACS is suited for semiconductor processing of silicon, gallium arsenide, indium phosphide, and silicon germanium substrates.[1]
The Tegal 903ACS can plasma etch silicon dioxide, silicon nitride, and silicon carbide.[1]
| Designation | Generation | Vintage | Changes | Source |
|---|---|---|---|---|
| Tegal 901ACS | — | — | Wide-gap diode reactor system suited for low-temperature plasma etch operations and delicate materials; no clamps or electrostatic mechanisms for wafer manipulation. | plasmatherm.com[1] |
Generated from public-source data on file. Enter your email to access — nothing is published; details are routed privately.
No research found yet — worked with this tool? Share what you know.
The Tegal 903ACS is suited for silicon, gallium arsenide, indium phosphide, and silicon germanium substrates.[1]
The Tegal 903ACS can plasma etch silicon dioxide, silicon nitride, and silicon carbide.[1]
The Tegal 903ACS is a narrow-gap diode reactor system.[1]
The Tegal 903ACS is intended for tightly controlled, anisotropic etching of silicon dioxide and silicon nitride insulating layers.[1]
The Tegal 903ACS handles wafers cassette to cassette.[1]
The following facts about the 903ACS are absent from this record as of this revision. First-hand knowledge or a citation closes a gap; every submission is reviewed before publication.
No publicly documented production dates or lifecycle milestones (introduction, end of production, EOL) for the 903ACS are on record.
Answerable by: OEM historical records or a trade-press announcement
The control-system platform and OS era of the 903ACS are not on record.
Answerable by: an engineer who operated it or OEM installation records
No publicly documented failure modes or field errata for the 903ACS are on record.
Answerable by: a field service engineer, process engineer, or maintenance technician
No publicly documented compatible parts, consumables, or accessories for the 903ACS are on record.
Answerable by: an OEM parts catalog or a service engineer
No publicly hosted manuals, SOPs, or datasheets for the 903ACS are on record.
Answerable by: university cleanroom staff or an OEM application specialist
No research found yet — worked with this tool? Share what you know.
Last updated Oct 3, 2026.
The Tegal 901ACS is a wide-gap diode reactor system for plasma etch operations on semiconductor substrates and wafers.
The Applied Materials 0010-47763 is an electrostatic chuck (ESC) assembly used in semiconductor etching processes.
The Applied Materials 0010-16392 is an electrostatic chuck assembly designed for 300 mm wafer processing, featuring a dual electrode configuration.