Comparison ledger
Applied Materials 0010-13622 RF Match for, Temescal TES 900, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | 0010-13622 RF Match forApplied Materials | TES 900Temescal |
|---|---|---|
| OEM | Applied Materials | Temescal |
| Category | Deposition | Deposition |
| Wafer size | — | — |
| Process node | — | — |
| Introduced | — | — |
| Production run | — | — |
| Lifecycle | — | — |
| Lifecycle milestones | — | — |
| Control system | — | — |
| Generation | — | — |
| Family | Applied Materials 0010-13622 RF Match for | Temescal TES 900 |
| Specifications | ||
| Configuration | High Efficiency HE RF Match-Bias[1] | — |
| Model | 0010-13622[1] | — |
| Product Type | RF Match for PVD (Physical Vapor Deposition)[1] | — |
| Feature | High Efficiency HE RF Match-Bias[1] | — |
| Process type | — | Sputtering[2] |
| Substrate orientation | — | Vertical[2] |
| Load lock type | — | Fast cycle dual level load lock[2] |
| Substrate carrier size | — | 12" x 12" pallet[2] |
| Number of cathodes | — | Up to three[2] |
| Cathode size | — | 5" x 15" magnetron cathodes[2] |
| Deposition uniformity | — | ±5%[2] |
| Substrate motion | — | Linear scanning in front of cathodes[2] |
| In-situ capabilities | — | RF etch and substrate heating in process chamber[2] |
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