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Comparison ledger

0010-22161 High EFF RF MatchversusConcept Two Speed

Applied Materials 0010-22161 High EFF RF Match, Lam Research Concept Two Speed, side by side. Every value shown is drawn from the cited encyclopedia entries.

Side-by-side comparison of selected equipment models
Attribute
Concept Two SpeedLam Research
OEMApplied MaterialsLam Research
Category——
Wafer size——
Process node——
Introduced——
Production run——
Lifecycle——
Lifecycle milestones——
Control system——
Generation——
FamilyApplied Materials 0010-22161 High EFF RF MatchLam Research Concept Two
Cited variants—
  • Concept Two Speed S (A)[1]
Specifications
MakeApplied Materials[2]Lam / Novellus[4]
Model0010-22161[2]Concept Two Speed[4]
DescriptionHTESC PH 1 REV A[3]—
ConditionUsed[3]—
Stock NumberBM6628[3]—
Configuration—1 Shrink chamber[4]
Manufacturer—Lam Research[5]
Configuration option—Shrink chamber[5]
Asset #—68566[4]
Process type—Etch chamber[1]
Platform—Novellus Concept Two platform[1]
Voltage—208 VAC[1]
Phase—3 phase[1]
Frequency—50/60 Hz[1]
Type—Chamber Only[1]
Full load current—21 A[1]
Main breaker rating—25 A[1]
Largest load—8 A[1]
Intended wafer size—8 inch[6]
Wafer shape—Notch[6]
SMIF interface—Yes[6]
Sources (6)Every fact above is drawn from these public sources
  1. [1]waferpedia.comwaferpedia.com
  2. [2]Equipment inventory listing
  3. [3]tarasemi.comtarasemi.com
  4. [4]inventory listing
  5. [5]waferpedia.comwaferpedia.com
  6. [6]semistarcorp.comsemistarcorp.com