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Comparison ledger

0010 47763versusRF 350 Ion Beam

Applied Materials 0010 47763, Veeco RF 350 Ion Beam, side by side. Every value shown is drawn from the cited encyclopedia entries.

Side-by-side comparison of selected equipment models
Attribute
0010 47763Applied Materials
OEMApplied MaterialsVeeco
CategoryEtchEtch
Wafer size——
Process node——
Introduced——
Production run——
Lifecycle——
Lifecycle milestones——
Control system——
Generation——
FamilyApplied Materials 0010 47763Veeco RF 350 Ion Beam
Specifications
Configuration2nd Source New[1]—
TypeMonopolar Dual Heated[2]—
DescriptionASSY, ESC, BONDED, MONOPOLAR DUAL HEATED[3]—
Possible MaterialsAl2O3 (aluminum oxide) or AlN (aluminum nitride)[2]—
Model0010-47763[1]RF 350[5]
OEMApplied Materials[1]Veeco[5]
Material (possible)Al2O3 (aluminum oxide) or AlN (aluminum nitride)[2]—
ApplicationFixing wafers in etching process (PVD, CVD, ETCH)[2]—
Quantity available (source)1[2]—
Ion Source Diameter—300 mm[4]
Ion Source Type—inductively coupled, filamentless RF[4]
Wafer Size—single 6" (150 mm)[4]
Substrate Loading—single-substrate loadlocked (or configurable to cassette-to-cassette)[4]
Category—Etch[6]
Tool type—Ion Beam Etcher (IBE)[5]
Process modes—Ion Beam Etching (IBE) and Reactive Ion Beam Etching (RIBE)[4]
Ion source type—inductively coupled, filamentless RF ion source[6]
Loading—single 6" wafer loading[4]
Applications—MEMS, semiconductor fabrication, and data storage[4]

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Sources (6)Every fact above is drawn from these public sources
  1. [1]inventory listing
  2. [2]saulcontrol.comsaulcontrol.com
  3. [3]getspares.comgetspares.com
  4. [4]semistarcorp.comsemistarcorp.com
  5. [5]Equipment inventory listing
  6. [6]waferpedia.comwaferpedia.com