Waferpedia

Comparison ledger

200 Bake Plateversus8800

CEE 200 Bake Plate, Mattson 8800, side by side. Every value shown is drawn from the cited encyclopedia entries.

Side-by-side comparison of selected equipment models
Attribute
8800Mattson
OEMCEEMattson
CategoryThermal / DiffusionThermal / Diffusion
Wafer size200mm200mm
Process node—0.25-micron
Introduced—1997
Production run——
Lifecycle——
Lifecycle milestones—1997 Award recognition · 1997 Product award
Control system——
Generation—third-generation
FamilyCEE 200Mattson 8800
Specifications
Wafer sizeup to 200mm wafer[1]200 mm[3]
SoftwareInternal OS[1]—
Voltage208V[1]—
Wafer Sizeup to 200 mm[2]—
Maximum Temperature300 °C[2]—
Bake MethodsHard contact, Proximity (lift 25-100 μm using N2)[2]—
Exhaust CoverYes (removal of fume)[2]—
Smart Pins for Temperature ControlYes[2]—
Tool type—Third-generation RTP tool[3]
Process target—0.25-micron process requirements[3]
Wafer format—Single-wafer[3]
Temperature performance—Improves temperature uniformity and repeatability[3]
Throughput—Significantly boosts throughput[3]
Ceramic Shield option—Backside emissivity independence and better wafer-to-wafer repeatability[3]
Nitrogen curtain—Minimum pre-purge time and high-throughput configuration[3]
High process purge gas flow—Fast chamber purging for high-throughput configuration[3]
ez-DTC—High-throughput configuration and improved control[3]
High temperature end effector—High-throughput configuration[3]
Double O-ring seal system—Prevents product loss[3]
Swivel cassettes with independent swivels—Higher throughput[3]
Standard slip-free ring package—High temperature slip-free processing and improved uniformity[3]
Certifications—CE certified and UL listed[3]
Generation—third-generation RTP tool[3]
Process node—0.25-micron[3]
Award—Semiconductor International Editor's Choice Best Product Award (1997)[3]

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Sources (3)Every fact above is drawn from these public sources
  1. [1]inventory listing
  2. [2]aggiefab.tamu.eduaggiefab.tamu.edu
  3. [3]web.archive.orgweb.archive.org