Waferpedia

Oxford Instruments

Plasmalab 100

Oxford Instruments Plasmalab 100 is a PECVD system. Oxford Instruments Plasmalab 100 is configured with a single automated wafer transfer load lock. Oxford Instruments Plasmalab 100 supports φ2', φ4', φ6', and φ8' single wafer auto transfer.[1][2]

Plasmalab 100 — Inventory photo
Fig. 01Plasmalab 100Inventory photo[1]
  • Plate 01Oxford Plasmalab 100 ICP (ID# 3894)

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  • Plate 02Oxford Plasmalab 100 ICP Etcher (ID# 3811)

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  • Plate 03Oxford Plasmalab 100 ICP Etcher (ID# 3811)

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  • Plate 04Video 1 - Oxford Plasmalab 100 ICP System (ID# 3589)

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Wafer size

φ2’, φ4’, φ6’, φ8’ single wafer auto transfer

Power

208 VAC, 3 Phase[1]

Vacuum

Edwards QDP 40[1]

Gas delivery

Gas Box:[1]

What it is

General reference — not yet source-verified

The Oxford Instruments Plasmalab 100 is a plasma-based semiconductor process tool used for thin-film deposition and related plasma processing.

What do the numbers mean?

Power & electrical4

Voltage
208 VAC, 3 Phase[1]
Accurate?
RF System:[1]
Accurate?
RF Generator
AE RFX 600 A[1]
Accurate?
LF Generator
AE LF-5[1]
Accurate?

Vacuum & pumping2

Dry pump
Edwards QDP 40[1]
Accurate?
Turbo pump
Alcatel ATP 80/100[1]
Accurate?

Wafer handling8

Gas 6
MKS 1179 A, Ar, 500 SCCM (TEOS carrier gas)[1]
Accurate?
Chuck
φ202 mm( φ2’, φ4’, φ6’, φ8’)[1]
Accurate?
Wafer size
φ2’, φ4’, φ6’, φ8’ single wafer auto transfer[1]
Accurate?
Chuck diameter
202 mm[1]
Accurate?
Gas 6
Ar, 500 SCCM (TEOS carrier)[1]
Accurate?
Wafer handling
φ2', φ4', φ6', φ8' single wafer auto transfer[1]
Accurate?
Load lock
single automated wafer transfer load lock[2]
Accurate?
Chamber configuration
one ICP process module connected to a single automated wafer transfer load lock[2]
Accurate?

Gas & chemistry12

Gas Box:[1]
Accurate?
Gas 1
MKS 1479 A, 5% SiH4 / N2, 1000 SCCM[1]
Accurate?
Gas 2
MKS 1479 A, NH3, 100 SCCM[1]
Accurate?
Gas 3
MKS 1179 A, N2, 2000 SCCM[1]
Accurate?
Gas 4
MKS 1179 A, N2O, 3000 SCCM[1]
Accurate?
Gas 5
MKS 1179 A, ,O2, 300 SCCM[1]
Accurate?
Gas 1
5% SiH4/N2, 1000 SCCM[1]
Accurate?
Gas 2
NH3, 100 SCCM[1]
Accurate?
Gas 3
N2, 2000 SCCM[1]
Accurate?
Gas 4
N2O, 3000 SCCM[1]
Accurate?
Gas 5
O2, 300 SCCM[1]
Accurate?
Process type
PECVD (Plasma-Enhanced Chemical Vapor Deposition)[1]
Accurate?

Control & software3

System Control
HP PC System, Windows XP[1]
Accurate?
MKS valve control
253 B[1]
Accurate?
System control
HP PC, Windows XP[1]
Accurate?

Configuration & options12

Full Load
25 A[1]
Accurate?
TEOS Thermotank
Thermocenter salvis lab[1]
Accurate?
Chamber:[1]
Accurate?
Shower head
φ225 mm[1]
Accurate?
Match Box
OPT AMU Oxford[1]
Accurate?
Match Box
Manual Transfor UP[1]
Accurate?
Valve
VAT 12036-PA 4[1]
Accurate?
Shower head diameter
225 mm[1]
Accurate?
Full load current
25 A[1]
Accurate?
Commissioned PECVD films
Ammonia free silicon nitride (SiH4-N2), Low stress silicon nitride (SiH4-NH3), Silicon dioxide (SiH4-N2O), Silicon oxynitride (SiH4-N2O-NH3), Amorphous silicon a-Si:N:H[7]
Accurate?
Deposition description
Deposition of various thin films via ALD and PECVD[7]
Accurate?
Configured use
silicon-based dielectric etching[2]
Accurate?

Vintage & configurations

Documented models & variants

DesignationGenerationVintageChangesSource
System 100 PECVD / FlexAL ALD (thermal/plasma) cluster system——Described as a cluster comprised of a FlexAL ALD system and a PlasmaLab 100 PECVD system sharing a common loadlock.uwaterloo.ca[7]
Plasmalab 100 PECVD——Configured for plasma-enhanced chemical vapor depositionEquipment inventory listing[1]
Plasmalab 100 ICP Dielectric Etcher——Configured for fluorine-based dielectric etching with ICPcnfusers.cornell.edu[2]
Plasmalab 100 ICP (Compound III-V)——Configured for compound III-V material etchingnanolab.berkeley.edu[8]
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What does it need to run?

Site utility requirements, footprint, and infrastructure needed to install and operate this tool. Sourced from public records.

  • Dry pumpEdwards QDP 40[1]
  • Voltage208 VAC, 3 Phase[1]
  • ConfigurationGas Box:[1]
  • Gas 1MKS 1479 A, 5% SiH4 / N2, 1000 SCCM[1]
  • Gas 2MKS 1479 A, NH3, 100 SCCM[1]
  • Gas 3MKS 1179 A, N2, 2000 SCCM[1]
  • Gas 4MKS 1179 A, N2O, 3000 SCCM[1]
  • Gas 5MKS 1179 A, ,O2, 300 SCCM[1]
  • ConfigurationRF System:[1]
  • RF GeneratorAE RFX 600 A[1]
  • LF GeneratorAE LF-5[1]
  • Turbo pumpAlcatel ATP 80/100[1]
  • Gas 15% SiH4/N2, 1000 SCCM[1]
  • Gas 2NH3, 100 SCCM[1]
  • Gas 3N2, 2000 SCCM[1]
  • Gas 4N2O, 3000 SCCM[1]
  • Gas 5O2, 300 SCCM[1]
  • Process typePECVD (Plasma-Enhanced Chemical Vapor Deposition)[1]

Parts & consumables

Tracked replaceable assemblies, spares criticality, and availability status across all major subsystems. Each entry cites its source.

Criticality:
Critical Spare
High
Medium
Consumable
Availability:In ProductionAftermarket OnlyEOL / NLAScarce
Pump
2 tracked parts
1 critical
Chamber Turbo Pump
Alcatel ATH 400M
Turbo pump for chamber vacuum system
Aftermarket Only[9]
Turbo Pump Controller
Alcatel ACT 600M
Controller for Alcatel ATH 400M turbo pump
Aftermarket Only[9]
RF System
1 tracked part
1 critical
RF Generator
Advanced Energy RFX 600A
600 W, 13.56 MHz RF generator for plasma generation
Aftermarket Only[9]
Chamber
1 tracked part
Water-cooled Electrode System
Electrode temperature range 10°C to 80°C
Aftermarket Only[9]
Gas Panel
1 tracked part
Gas Mass Flow Controllers (MFCs)
6-line gas pod with MFCs for Argon, Nitrogen, CHF3, NF3, N2O gases
Aftermarket Only[9]
Scheduled ConsumablesReplace at PM intervals
Gas Mass Flow Controllers (MFCs)

Where are the manuals?

Publicly hosted documents referencing this tool, linked at their original location. Hosted by the linked institutions — availability may change.

Generated from public-source data on file. Enter your email to access — nothing is published; details are routed privately.

Not publicly documented

Field notes

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Frequently asked questions

What kind of tool is the Plasmalab 100?General reference — not yet source-verified

It is a deposition system, meaning it belongs to the class of equipment used to create thin films on substrates.

What does a deposition system do in general?General reference — not yet source-verified

It adds a material layer to a surface under controlled conditions so that the resulting film has the intended composition and properties.

Where is this class used in a process flow?General reference — not yet source-verified

It is used whenever a new layer must be formed before later patterning, treatment, or assembly steps.

What kinds of films are made with this class of tool?General reference — not yet source-verified

Such systems are used for a range of functional films, including insulating, conductive, protective, and other engineered layers.

Not publicly documented

The following facts about the Plasmalab 100 are absent from this record as of this revision. First-hand knowledge or a citation closes a gap; every submission is reviewed before publication.

  • No publicly documented production dates or lifecycle milestones (introduction, end of production, EOL) for the Plasmalab 100 are on record.

    Answerable by: OEM historical records or a trade-press announcement

  • The control-system platform and OS era of the Plasmalab 100 are not on record.

    Answerable by: an engineer who operated it or OEM installation records

  • No publicly documented failure modes or field errata for the Plasmalab 100 are on record.

    Answerable by: a field service engineer, process engineer, or maintenance technician

  • The process node or technology generation of the Plasmalab 100 is not on record.

    Answerable by: an OEM datasheet or a fab qualification report

  • The operating principle of the Plasmalab 100 is not documented in this record.

    Answerable by: an equipment physicist or OEM application engineer

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Sources & citations

Sources (11)Every fact above is drawn from these public sources
  1. [1]Inventory photo
  2. [2]cnfusers.cornell.edu — cnfusers.cornell.educnfusers.cornell.edu
  3. [3]Inventory photo
  4. [4]Inventory photo
  5. [5]Inventory photo
  6. [6]Inventory photo
  7. [7]uwaterloo.ca — uwaterloo.cauwaterloo.ca
  8. [8]nanolab.berkeley.edu — nanolab.berkeley.edunanolab.berkeley.edu
  9. [9]semistarcorp.comsemistarcorp.com
  10. [10]Cleanroom Equipment Capabilities and Materials Exclusions | Utah Nanofab — nanofab.utah.edunanofab.utah.edu
  11. [11]Oxford-PECVD-SOP_REV-F.pdf — cores.research.asu.educores.research.asu.edu
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Last updated Oct 10, 2026.

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